PBSS5160K Datasheet, Transistor, NXP Semiconductors

PBSS5160K Features

• Transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat gener

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PBSS5160K

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NXP ↗ Semiconductors

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155.09kb

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📄 Datasheet

Description:

60v 1a pnp low vcesat (biss) transistor. PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package

PBSS5160K Application

• Applications I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g

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PBSS5160K

NXP Semiconductors

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