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BLV859

UHF linear push-pull power transistor

BLV859 Features

* Double internal input and output matching for an optimum wideband capability and high gain

* Polysilicon emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATION

* Common emitter class-A operatio

BLV859 General Description

NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. 5 3 Top view MAM031 BLV859 PINNIN.

BLV859 Datasheet (126.05 KB)

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Datasheet Details

Part number:

BLV859

Manufacturer:

NXP ↗

File Size:

126.05 KB

Description:

Uhf linear push-pull power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Phi.

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BLV859 UHF linear push-pull power transistor NXP

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