BLV859 Datasheet - NXP

BLV859 UHF linear push-pull power transistor

NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. 5 3 Top view MAM031 BLV859 PINNIN.

BLV859 Features

* Double internal input and output matching for an optimum wideband capability and high gain

* Polysilicon emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATION

* Common emitter class-A operatio

BLV859 Datasheet (126.05 KB)