BLV861 Datasheet - NXP

BLV861 UHF linear push-pull power transistor

NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. PINNING PIN 1 2 3 4 5 Notes SYMBOL c1 c2 b1 b2 e BLV861 DESCRIPTION collector 1; note 1 collector 2; note 1 base 1 ba.

BLV861 Features

* Double stage internal input and output matching networks for an optimum wideband capability and high gain

* Polysilicon emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Common emitter

BLV861 Datasheet (129.20 KB)