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BLV88N30 Datasheet - BELLING

BLV88N30 N-Channel Enhancement Mode Power MOSFET

BLV88N30 N-channel Enhancement Mode Power MOSFET Preliminary August . 2009 BVDSS RDS(ON) ID 300V 48mΩ 88A 300V 88A VDMOS ，、， PDP ( TC=25oC ) VDS VGS ID IDR ( 1) ( 1) : 1. PW<10us, duty cycle<1% http://www.belling.com.cn 300 + 30 88 176 88 176 V V A A A A Page 1/1 BLV88N30 ( TC=25C ) BVDSS RDS(ON) VGS(th) IDSS IGSS Ciss Coss Crss - - VGS=0V, ID=10mA VGS=10V, ID=20A VDS=VGS, ID=1mA VDS=300V, VGS=0V VGS= ± 30V VDS=25V VGS=.

BLV88N30 Datasheet (826.51 KB)

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Datasheet Details

Part number:

BLV88N30

Manufacturer:

BELLING

File Size:

826.51 KB

Description:

N-channel enhancement mode power mosfet.

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BLV88N30 N-Channel Enhancement Mode Power MOSFET BELLING

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