BLV897 Datasheet - NXP

BLV897 UHF push-pull power transistor

collector 1 collector 2 base 1 base 2 common emitters connected to flange c1 2 b1 e 5 b2 DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are con.

BLV897 Features

* Internal input matching for an optimum wideband capability and high gain

* Polysilicon emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Common emitter class-AB operation in base statio

BLV897 Datasheet (101.37 KB)