BLV897 Datasheet (NXP) - UHF push-pull power transistor

BLV897, UHF push-pull power transistor

collector 1 collector 2 base 1 base 2 common emitters connected to flange c1 2 b1 e 5 b2 DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.

The common emitters are con

BLV897 Features

* Internal input matching for an optimum wideband capability and high gain

* Polysilicon emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Common emitter class-AB operation in base statio