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BUK573-48C - PowerMOS transistor Clamped logic level FET

BUK573-48C Description

Philips Semiconductors Product specification PowerMOS transistor Clamped logic level FET GENERAL .
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

BUK573-48C Applications

* It has built-in zener diodes providing active drain voltage clamping. BUK573-48C QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Repetitive clamped turn off energy; Tj = 150˚C Drain-source on-state resistan

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PowerMOS transistor Clamped logic level FET NXP
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