BUK573-60B Datasheet - NXP

BUK573-60B, PowerMOS transistor Logic level FET

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Applications

* BUK573-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK573 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 13 25 0.085 MAX. -60B 60 12 25 0.1 UNIT V A W Ω PINNING - SOT186A PIN 1 2 3 gate drain source DES

BUK573-60B_PhilipsSemiconductors.pdf