BUK573-60A PowerMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

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Datasheet Specifications

Part number: BUK573-60A
Manufacturer: NXP ↗
File Size: 57.48 KB
Datasheet: BUK573-60A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor Logic level FET

Applications

* BUK573-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK573 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 13 25 0.085 MAX. -60B 60 12 25 0.1 UNIT V A W Ω PINNING - SOT186A PIN 1 2 3 gate drain source DES

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BUK573-60A PowerMOS transistor Logic level FET NXP

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