Description
Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev.3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideb.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
* On-Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Temperature Compensation with
Applications
* Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg. , f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ąPower Gain
* 27.8 dB ąPower Added Efficiency
* 3.2
