Datasheet4U Logo Datasheet4U.com

MW7IC2725NR1 Power Amplifier

MW7IC2725NR1 Description

Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev.3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideb.

MW7IC2725NR1 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* On-Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Temperature Compensation with

MW7IC2725NR1 Applications

* Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg. , f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ąPower Gain
* 27.8 dB ąPower Added Efficiency
* 3.2

📥 Download Datasheet

Preview of MW7IC2725NR1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MW7IC2725NR1
Manufacturer
NXP ↗
File Size
1.02 MB
Datasheet
MW7IC2725NR1-NXP.pdf
Description
Power Amplifier

📁 Related Datasheet

  • MW7IC2040GNR1 - Power Amplifiers (Motorola Semiconductor Products)
  • MW7IC2040NBR1 - Power Amplifiers (Motorola Semiconductor Products)
  • MW7IC2040NR1 - Power Amplifiers (Motorola Semiconductor Products)
  • MW7IC008NT1 - RF LDMOS Wideband Integrated Power Amplifier (Freescale Semiconductor)
  • MW7IC18100GNR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
  • MW7IC18100NBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
  • MW7IC18100NR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
  • MW7IC915NT1 - RF LDMOS Wideband Integrated Power Amplifier (Freescale Semiconductor)

📌 All Tags

Power Amplifier NXP
NXP MW7IC2725NR1-like datasheet