MW7IC2725NR1 Datasheet (NXP)

MW7IC2725NR1, Power Amplifier

Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev.

3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz.

This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFD

MW7IC2725NR1 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* On-Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with