MW7IC2725NBR1, MW7IC2725NR1 Datasheet - NXP

MW7IC2725NBR1 Power Amplifier

Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFD.

MW7IC2725NBR1 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* On-Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with

MW7IC2725NR1-NXP.pdf