MW7IC2750NBR1, MW7IC2750NR1 Datasheet - NXP

MW7IC2750NBR1 Power Amplifier

Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on chip matching that makes it usable from 2300 2700 MHz. This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = .

MW7IC2750NBR1 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Te

MW7IC2750NR1-NXP.pdf