Description
Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev.4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wid.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* On
* Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Te
Applications
* PTyoputic=al4WWiMatAtsXAPvegr. ,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I. D1Q61d,=6146Q0 AmMA,3/I4D,Q42
= 550 mA, Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. Power Gain
* 26 dB
Power Added Efficiency
* 11%
Device Output Sign
