MW7IC2750NR1 - Power Amplifier

Datasheet Details

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.

📁 MW7IC2750NR1 Similar Datasheet

MW7IC2040GNR1 - Power Amplifiers (Motorola Semiconductor Products)
MW7IC2040NBR1 - Power Amplifiers (Motorola Semiconductor Products)
MW7IC2040NR1 - Power Amplifiers (Motorola Semiconductor Products)
MW7IC008NT1 - RF LDMOS Wideband Integrated Power Amplifier (Freescale Semiconductor)
MW7IC18100GNR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MW7IC18100NBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MW7IC18100NR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MW7IC915NT1 - RF LDMOS Wideband Integrated Power Amplifier (Freescale Semiconductor)

Other Datasheets by NXP

Published: Jul 10, 2020 |