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PBSS3540MB 0.5A PNP low VCEsat (BISS) transistor

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Description

SOT883B PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor Rev.1 * 7 March 2012 Product data sheet 1.Product profile 1.1 General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number
PBSS3540MB
Manufacturer
NXP ↗
File Size
194.37 KB
Datasheet
PBSS3540MB-NXP.pdf
Description
0.5A PNP low VCEsat (BISS) transistor

Features

* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm
* Low collector-emitter saturation voltage VCEsat

Applications

* DC-to-DC conversion
* Supply line switching
* Battery charger
* High efficiency due to less heat generation
* AEC-Q101 qualified
* Reduced Printed-Circuit Board (PCB) requirements
* LCD backlighting
* Driver in low supply voltage applications (e. g. lamps and LEDs)

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