* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl
PBSS5580PA Datasheet (199.95 KB)
PBSS5580PA
199.95 KB
4 a pnp low vcesat (biss) transistor.
www.DataSheet4U.com PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 Gen.
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