PBSS5580PA 4 A PNP low VCEsat (BISS) transistor

NXP

Description

www.DataSheet4U.com PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev.01 * 6 May 2010 Product data sheet 1.Product profile 1.1 Gen.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plast.

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Datasheet Specifications

Part number: PBSS5580PA
Manufacturer: NXP ↗
File Size: 199.95 KB
Datasheet: PBSS5580PA_PhilipsSemiconductors.pdf
Description: 4 A PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl

Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak

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PBSS5580PA PNP low VCEsat BISS transistor NXP

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