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PHD6N10E

PowerMOS transistor

PHD6N10E General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power S.

PHD6N10E Datasheet (70.04 KB)

Preview of PHD6N10E PDF

Datasheet Details

Part number:

PHD6N10E

Manufacturer:

NXP ↗

File Size:

70.04 KB

Description:

Powermos transistor.

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PHD6N10E PowerMOS transistor NXP

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