PHD6N10E PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capabilit.

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Datasheet Specifications

Part number: PHD6N10E
Manufacturer: NXP ↗
File Size: 70.04 KB
Datasheet: PHD6N10E_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

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PHD6N10E PowerMOS transistor NXP

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