PHD6N10E Datasheet - NXP

PHD6N10E_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHD6N10E

Manufacturer:

NXP ↗

File Size:

70.04 KB

Description:

Powermos transistor.

PHD6N10E, PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.

Intended for use in Switched Mode Power S

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