PHD6N10E Datasheet, Transistor, NXP

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Part number:

PHD6N10E

Manufacturer:

NXP ↗

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70.04kb

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📄 Datasheet

Description:

Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche

PHD6N10E Application

• Applications QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-sourc

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