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BLL6H1214-500 - LDMOS L-band radar power transistor

NXP Semiconductors

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Datasheet Details

Part number: BLL6H1214-500
Manufacturer: NXP ↗ Semiconductors
File Size: 227.88 KB
Datasheet: BLL6H1214-500_NXPSemiconductors.pdf
Description: LDMOS L-band radar power transistor

BLL6H1214-500 Product details

Description

500 W.

Features

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).

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