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2N3772 High Power NPN Silicon Power Transistors

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Description

2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switc.

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Features

* Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc
* 2N3771 = 2.5 Adc @ VCE = 60 Vdc
* 2N3772
* These Devices are Pb
* Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Collector
* Emitter Voltage Collector

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