* High breakdown voltage VCEO 100/120V, High current 1A.
* Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2
2SB631
94.38 KB
Pnp / npn epitaxial planar silicon transistors.
Ordering number : ENN346G
2SB631, 631K/ 2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applic.
📁 Related Datasheet
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(INCHANGE)
isc Silicon PNP Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 ·Minimum.
2SB631 - PNP/NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Fe.
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DESCRIPTION ·With TO-126 package ·Co.
2SB631 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-100V(Min) ·Good .
2SB631K - PNP/NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Fe.
2SB631K - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
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DESCRIPTION ·With TO-126 package ·Co.
2SB631K - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-120V(Min) ·Good L.
2SB631K - PNP / NPN Epitaxial Planar Silicon Transistors
(ON Semiconductor)
Ordering number : ENN346G
2SB631, 631K/ 2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applic.
