FCPF190N60E

N-Channel MOSFET

ON Semiconductor

FCPF190N60E Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 160 mW

* Ultra Low Gate Charge (Typ. Qg = 63 nC)

* Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCPF190N60E General Description

SUPERFET II MOSFET is ON Semiconductor’s brand

*new high voltage super

*junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

*resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide .

FCPF190N60E Datasheet (190.09 KB)

FCPF190N60E Datasheet Preview — Preview of FCPF190N60E PDF

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FCPF190N60E

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ON Semiconductor ↗

File Size:

190.09 KB

Description:

N-channel mosfet.

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FCPF190N60E N-Channel MOSFET ON Semiconductor

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FCPF190N60E Features

FCPF190N60E General Description

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