FDMC8010DC N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW FDMC8010DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.

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Datasheet Specifications

Part number: FDMC8010DC
Manufacturer: ON Semiconductor ↗
File Size: 426.32 KB
Datasheet: FDMC8010DC-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* DUAL COOL Top Side Cooling PQFN Package
* Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A
* Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A
* High Performance Technology for Extremely Low rDS(on)
* These Devices are Pb
* Free and are RoHS Compliant App

Applications

* Load Switch
* Motor Bridge Switch
* Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V ID Drain Current
* Continuous

FDMC8010DC Distributors

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FDMC8010DC N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMC8010DC-like datasheet