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FDMC8854 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 15 A, 5.7 mW FDMC8854 General .
This N. Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process.

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Features

* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
* Low Profile
* 1 mm Max in Power 33
* This Device is Pb

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMC8854-like datasheet