* RDS(on) = 14 mW (Max.) @ VGS = 10 V, ID = 9.6 A
* RDS(on) = 17 mW (Max.) @ VGS = 4.5 V, ID = 8.7 A
* Low Profile
* 0.8 mm Max in MLP 3.3 x 3.3
* These Devices are Pb
* Free and are RoHS Compliant Application
* DC
* DC Conversion MAXIMU
FDMC8878 Datasheet (246.39 KB)
FDMC8878
246.39 KB
N-channel power mosfet.
FDMC8878 N-Channel POWERTRENCH) MOSFET 30 V, 16.5 A, 14 mW This N Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced Powe.
📁 Related Datasheet
FDMC8878 N-Channel Power Trench MOSFET (Fairchild Semiconductor)
FDMC8854 N-Channel Power Trench MOSFET (Fairchild Semiconductor)
FDMC8854 N-Channel MOSFET (ON Semiconductor)
FDMC8882 MOSFET (Fairchild Semiconductor)
FDMC8882 N-Channel MOSFET (ON Semiconductor)
FDMC8884 N-Channel Power Trench MOSFET (Fairchild)
FDMC8010 N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDMC8010 N-Channel MOSFET (ON Semiconductor)
FDMC8010DC N-Channel Dual Cool 33 PowerTrench MOSFET (Fairchild Semiconductor)
FDMC8010DC N-Channel MOSFET (ON Semiconductor)
