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FDMC8882 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 16 A, 14.3 mohm FDMC8882 .
This N. Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the on. stat.

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Features

* Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A
* Max RDS(on) = 22.5 mW at VGS = 4.5 V, ID = 8.3 A
* High Performance Technology for Extremely Low RDS(on)
* Termination is Lead
* Free

FDMC8882 Distributors

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMC8882-like datasheet