FDMC8882 Datasheet (ON Semiconductor)

FDMC8882, N-Channel MOSFET

This N *Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the on *state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMC8882 Features

* Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A

* Max RDS(on) = 22.5 mW at VGS = 4.5 V, ID = 8.3 A

* High Performance Technology for Extremely Low RDS(on)

* Termination is Lead

* Free

* RoHS Compliant Applications

* High Side in DC

* DC