FDMD82100 - Dual N-Channel MOSFET

ON Semiconductor

FDMD82100 Datasheet Preview — Preview of FDMD82100 PDF

Datasheet Details

Part number	FDMD82100
Manufacturer	ON Semiconductor ↗
File Size	384.60 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMD82100-ONSemiconductor.pdf

FDMD82100 Product details

Description

This device includes two 100 V N Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package.HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

Max rDS(on) = 19 mW at VGS = 10 V, ID = 7 A.
Max rDS(on) = 33 mW at VGS = 6 V, ID = 5.5 A.
Ideal for Flexible Layout in Primary Side of Bridge Topology.
100% UIL Tested.
Kelvin High Side MOSFET Drive Pin.
out Capability.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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Published: Dec 20, 2023 |