FDMD82100 Datasheet - ON Semiconductor

FDMD82100 Dual N-Channel MOSFET

FDMD82100 Features

* Max rDS(on) = 19 mW at VGS = 10 V, ID = 7 A

* Max rDS(on) = 33 mW at VGS = 6 V, ID = 5.5 A

* Ideal for Flexible Layout in Primary Side of Bridge Topology

* 100% UIL Tested

* Kelvin High Side MOSFET Drive Pin

* out Capability

* This Device is Pb

Datasheet Details

FDMD82100

384.60 KB

Dual n-channel mosfet.

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FDMD82100 FDMD82100 Dual N-Channel MOSFET ON Semiconductor

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