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FDMD86100

Dual N-Channel MOSFET

FDMD86100 Features

* Common Source Configuration to Eliminate PCB Routing

* Large Source Pad on Bottom of Package for Enhanced Thermals

* Shielded Gate MOSFET Technology

* Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A

* Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A

* I

FDMD86100 General Description

This package integrates two N

*Channel devices connected internally in common

*source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 .

FDMD86100 Datasheet (424.46 KB)

Preview of FDMD86100 PDF

Datasheet Details

Part number:

FDMD86100

Manufacturer:

ON Semiconductor ↗

File Size:

424.46 KB

Description:

Dual n-channel mosfet.
DATA SHEET www.onsemi.com MOSFET

* Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 39 A, 10.5 mW VDS 100 V rDS(on) MAX 10.5 mW @ 10 V 1.

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FDMD86100 Dual N-Channel MOSFET ON Semiconductor

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