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FDMD86100 - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMD86100
Manufacturer	ON Semiconductor ↗
File Size	424.46 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMD86100-ONSemiconductor.pdf

FDMD86100 Product details

Description

This package integrates two N Channel devices connected internally in common source configuration and incorporates Shielded Gate technology.

Features

Common Source Configuration to Eliminate PCB Routing.
Large Source Pad on Bottom of Package for Enhanced Thermals.
Shielded Gate MOSFET Technology.
Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A.
Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A.
Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
100% UIL tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 20, 2023 |