FDMD86100 Dual N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 39 A, 10.5 mW VDS 100 V rDS(on) MAX 10.5 mW @ 10 V 1.
This package integrates two N. Channel devices connected internally in common. source configuration and incorporates Shielded Gate techn.

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Datasheet Specifications

Part number: FDMD86100
Manufacturer: ON Semiconductor ↗
File Size: 424.46 KB
Datasheet: FDMD86100-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Common Source Configuration to Eliminate PCB Routing
* Large Source Pad on Bottom of Package for Enhanced Thermals
* Shielded Gate MOSFET Technology
* Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A
* Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A
* I

Applications

* Isolated DC
* DC Synchronous Rectifiers
* Common Ground Load Switches Pin 1 Pin 1 G1 D1 D1 D1 S1 / S2 D2 D2 D2 G2 Top Bottom PQFN8 5X6, 1.27P (Power 5 x 6) CASE 483AS MARKING DIAGRAM ZXYYKK FDMD 86100 ZZ = Assembly Site Code X = Year Code YY = Weekly Code KK

FDMD86100 Distributors

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FDMD86100 Dual N-Channel MOSFET ON Semiconductor

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