Part number:
FDME1034CZT
Manufacturer:
File Size:
340.95 KB
Description:
Dual-channel mosfet.
FDME1034CZT Datasheet (340.95 KB)
* an independent N
* Channel & P
* Channel MOSFET with low on
* state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFETt 1.6x1.6 Thin package offers exception
FDME1034CZT Datasheet (340.95 KB)
FDME1034CZT
340.95 KB
Dual-channel mosfet.
📁 Related Datasheet
FDME1034CZT - Complementary PowerTrench MOSFET
(Fairchild Semiconductor)
..
FDME1034CZT Complementary PowerTrench® MOSFET
December 2009
FDME1034CZT
Complementary PowerTrench® MOSFET
N-channel: 20 V, 3.4 .
FDME1023PZT - Dual P-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
..
FDME1023PZT Dual P-Channel PowerTrench®MOSFET
December 2009
FDME1023PZT
Dual P-Channel PowerTrench® MOSFET
-20 V, -2.3 A, 142 m.
FDME1023PZT - Dual P-Channel MOSFET
(ON Semiconductor)
MOSFET – Dual P-Channel POWERTRENCH)
-20 V, -2.6 A, 142 mW
FDME1023PZT
Description This device is designed specifically as a single package solution.
FDME1024NZT - Dual N-Channel Power Trench MOSFET
(Fairchild Semiconductor)
..
FDME1024NZT Dual N-Channel Power Trench® MOSFET
December 2009
FDME1024NZT
Dual N-Channel Power Trench® MOSFET
20 V, 3.4 A, 66 m.
FDME1024NZT - Dual N-Channel MOSFET
(ON Semiconductor)
MOSFET – Dual, N-Channel, POWERTRENCH)
20 V, 3.8 A, 66 mW
FDME1024NZT
Description This Device is Designed Specifically as a Single Package Solution
f.
FDME410NZT - N-Channel MOSFET
(Fairchild Semiconductor)
FDME410NZT N-Channel PowerTrench® MOSFET
October 2013
FDME410NZT
N-Channel PowerTrench® MOSFET
20 V, 7 A, 26 mΩ
Features
General Description
Ma.
FDME430NT - N-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDME430NT N-Channel PowerTrench® MOSFET
October 2013
FDME430NT
N-Channel PowerTrench® MOSFET
30 V, 6 A, 40 mΩ
Features
General Description
Max .
FDME510PZT - MOSFET
(Fairchild Semiconductor)
FDME510PZT P-Channel PowerTrench® MOSFET
FDME510PZT
P-Channel PowerTrench® MOSFET
-20 V, -6 A, 37 mΩ
Features
Max rDS(on) = 37 mΩ at VGS = -4.5 V, .
