FDP4D5N10C N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 128 A, 4.5 mW GDS GDS FDP4D5N10C, FDPF4D5N10C .
This N. Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDP4D5N10C
Manufacturer: ON Semiconductor ↗
File Size: 429.70 KB
Datasheet: FDP4D5N10C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested
* This Device is Pb

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter S MARKING DIAGRAM FDPF 5N10C AYWWZZ FDPF4D5N10C, FQD45N10C = Specific Device Code A = Assembly Location YWW = Date Code (Year and Week)

FDP4D5N10C Distributors

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FDP4D5N10C N-Channel MOSFET ON Semiconductor

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