FDP4D5N10C

N-Channel MOSFET

ON Semiconductor

FDP4D5N10C Features

* Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A

* Extremely Low Reverse Recovery Charge, Qrr

* 100% UIL Tested

* This Device is Pb

* Free Halide, Free and RoHS Compliant. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

FDP4D5N10C General Description

This N

*Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on

*state resistance and yet maintain superior switching performance with best in class soft body diode. TO

.

FDP4D5N10C Datasheet (429.70 KB)