FDP4D5N10C - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDP4D5N10C
Manufacturer	ON Semiconductor
File Size	429.70 KB
Description	N-Channel MOSFET
Datasheet	FDP4D5N10C-ONSemiconductor.pdf

FDP4D5N10C Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology.This Process has been Optimized to minimize on state resistance and yet maintain superior switching performance with best in class soft body diode. 220 CASE 221A TO 220 Fullpack, 3 Lead / TO 220F 3SG CASE 221AT D G

Features

Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A.
Extremely Low Reverse Recovery Charge, Qrr.
100% UIL Tested.
This Device is Pb.
Free Halide, Free and RoHS Compliant.

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Published: Oct 5, 2020 |