MTB75N06HD Datasheet - ON Semiconductor

MTB75N06HD Power MOSFET

MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe.

MTB75N06HD Features

* es. 7000 VDS = 0 V 6000 Ciss 5000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 4000 3000 Crss Ciss 2000 1000 0 10 5 05 VGS VDS Coss Crss 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 MTB75N0

MTB75N06HD-ONSemiconductor.pdf