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MTY16N80E Datasheet - ON Semiconductor

MTY16N80E Power Field Effect Transistor

MTY16N80E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies,.

MTY16N80E Features

* ) Figure 7b. High Voltage Capacitance Variation C, CAPACITANCE (pF) C, CAPACITANCE (pF) http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) MTY16N80E 12 10 8 Q1 6 QT Q2 400 VGS 300 200 4 TJ = 25°C 100 2 ID = 16 A Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE

MTY16N80E Datasheet (208.90 KB)

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Datasheet Details

Part number:

MTY16N80E

Manufacturer:

ON Semiconductor ↗

File Size:

208.90 KB

Description:

Power field effect transistor.

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MTY16N80E Power Field Effect Transistor ON Semiconductor

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