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MTY16N80E - Power Field Effect Transistor

The MTY16N80E by ON Semiconductor is a Power Field Effect Transistor. Below is the official datasheet preview.

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Official preview page of the MTY16N80E Power Field Effect Transistor datasheet (ON Semiconductor).

MTY16N80E Product details

Features

📁 MTY16N80E Similar Datasheet

  • MTY100N10E - TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM (Motorola)
  • MTY10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM (Motorola)
  • MTY14N100E - TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM (Motorola)
  • MTY25N60E - TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM (Motorola)
  • MTY30N50E - TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM (Motorola)
  • MTY55N20E - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM (Motorola)
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