* ) Figure 7b. High Voltage Capacitance Variation C, CAPACITANCE (pF) C, CAPACITANCE (pF) http://onsemi.com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) MTY16N80E 12 10 8 Q1 6 QT Q2 400 VGS 300 200 4 TJ = 25°C 100 2 ID = 16 A Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE
MTY16N80E Datasheet (208.90 KB)
MTY16N80E
208.90 KB
Power field effect transistor.
MTY16N80E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high .
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