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MTY16N80E Power Field Effect Transistor

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Description

MTY16N80E Designer’s™ Data Sheet TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This high .

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Features

* ) Figure 7b. High Voltage Capacitance Variation C, CAPACITANCE (pF) C, CAPACITANCE (pF) http://onsemi. com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) MTY16N80E 12 10 8 Q1 6 QT Q2 400 VGS 300 200 4 TJ = 25°C 100 2 ID = 16 A Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

MTY16N80E Distributors

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