NCP51100 Datasheet - ON Semiconductor

NCP51100 Low-Side Gate Driver

Pin Name IN ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ GND ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ OUT ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VDD Pin No. 1 2 3, 4 5 I/O/x I x O x Description Non *inverting Inpu.

Single 2 A High-Speed, Low-Side Gate Driver Product Preview NCP51100 The NCP51100 2 A gate driver is designed to drive an N Channel enhancement mode MOSFET in low side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with TTL input thresholds. Internal circuitry provides an under voltage lockout function by holding the output LOW until the supply voltage is within the operating range. The N.

NCP51100 Features

* Industry

* Standard Pinouts

* 11 V to 18 V Operating Range

* 3 A Peak Sink/Source at VDD = 12 V

* 2.5 A Sink / 1.8 A Source at VOUT = 6 V

* 14 ns / 7 ns Typical Rise/Fall Times (1 nF Load)

* Under 20 ns Typical Propagation Delay Time

NCP51100-ONSemiconductor.pdf