Part number:
NTBG080N120SC1
Manufacturer:
File Size:
316.67 KB
Description:
Sic mosfet.
NTBG080N120SC1 Datasheet (316.67 KB)
* Typ. RDS(on) = 80 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 56 nC)
* Low Effective Output Capacitance (Typ. Coss = 79 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on
NTBG080N120SC1 Datasheet (316.67 KB)
NTBG080N120SC1
316.67 KB
Sic mosfet.
📁 Related Datasheet
NTBG014N120M3P - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L
NTBG014N120M3P
Features
• Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .
NTBG015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
NTBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS.
NTBG020N090SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L
NTBG020N090SC1
Features
• Typ. RDS(on) = 20 mW @ VG.
NTBG020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
NTBG020N120SC1
Features
• Typ. RDS(on) = 20 mW • Ul.
NTBG025N065SC1 - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L
NTBG025N065SC1
Features
• Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 m.
NTBG028N170M1 - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L
NTBG028N170M1
Features
• Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG.
NTBG040N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S
Features
• Typ. RDS(on) = 40 .
NTBG040N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7
V(BR)DSS 1200 V
RDS(ON) MAX 56 mW @ 20 V
ID MAX 60.
