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NTBG080N120SC1 SiC MOSFET

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 80 mohm, 1200 V, M1, D2PAK-7L NTBG080N120SC1 .

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Features

* Typ. RDS(on) = 80 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 56 nC)
* Low Effective Output Capacitance (Typ. Coss = 79 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on

Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* Source Voltage VDSS 1200

NTBG080N120SC1 Distributors

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NTB0101 NTB0101A NTB0102 NTB0102-Q100 NTB0104 NTB0104-Q100

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