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FDI150N10 - 100V 57A N-Channel MOSFET

FDI150N10 Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on. state resistan.

FDI150N10 Features

* RDS(on) = 12 mW (Typ. ) @ VGS = 10 V, ID = 49 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDI150N10 Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micor Solar Inverter MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter FDI150N10 Unit VDSS Drain

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100V 57A N-Channel MOSFET ON Semiconductor
ON Semiconductor FDI150N10-like datasheet