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FDMD8630 N-Channel MOSFET

FDMD8630 Description

FDMD8630 MOSFET * N-Channel, POWERTRENCH), Dual 30 V, 167 A, 1.0 mW General .
This package integrates two N. Channel devices connected internally in common. source configuration.

FDMD8630 Features

* Common Source Configuration to Eliminate PCB Routing
* Large Source Pad on Bottom of Package for Enhanced Thermals
* Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A
* Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A
* Ideal for Flexible Layout in Secondary Side

FDMD8630 Applications

* Isolated DC
* DC Synchronous Rectifiers
* Common Ground Load Switches www. onsemi. com Top Bottom Pin 1 G1 D1D1D1 S1 / S2 D2 D2D2 G2 PQFN8 5X6, 1.27P CASE 483AS MARKING DIAGRAM $Y&Z&3&K FDMD 8630 &Y &Z &3 &K FDMD8630 = ON Semiconductor Logo = Assembly Plant Code = N

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