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FDMS003N08C - N-Channel MOSFET

FDMS003N08C Description

FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ .
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

FDMS003N08C Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A
* Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
* 50% lower Qrr than other MOSFET suppliers
* Lowers switching noise/EMI
* MSL1 robust package design
* 100% UIL te

FDMS003N08C Applications

* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar Top Bottom S Pin 1 S D Pin 1 S S G S D D D D D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Para

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