FDS6680A - N-Channel MOSFET

ON Semiconductor

FDS6680A Datasheet Preview — Preview of FDS6680A PDF

Datasheet Details

Part number	FDS6680A
Manufacturer	ON Semiconductor ↗
File Size	255.83 KB
Description	N-Channel MOSFET
Datasheet	FDS6680A-ONSemiconductor.pdf

FDS6680A Product details

Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V.
Ultra-low gate charge.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1a).

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Published: Dec 25, 2023 |