FDS6900AS - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDS6900AS
Manufacturer	ON Semiconductor ↗
File Size	315.10 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS6900AS-ONSemiconductor.pdf

FDS6900AS Product details

Description

The FDS6900AS is designed to replace two single SO 8 MOSFETs and Schottky diode in synchronous dc dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside swit

Features

Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
RDS(on) = 22 mW at VGS = 10 V.
RDS(on) = 28 mW at VGS = 4.5 V.
Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
RDS(on) = 27 mW at VGS = 10 V.
RDS(on) = 34 mW at VGS = 4.5 V.
100% RG (Gate Resistance) Tested.
These Devices are Pb.
Free and are RoHS Compliant Specifications.

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Published: Mar 10, 2020 |