Description
The FDS6900AS is designed to replace two single SO
8 MOSFETs
and Schottky diode in synchronous dc
dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.
channel, logic level,
Features
- Q2: Optimized to Minimize Conduction Losses Includes SyncFET
Schottky Body Diode, 8.2 A, 30 V.
- RDS(on) = 22 mW at VGS = 10 V.
- RDS(on) = 28 mW at VGS = 4.5 V.
- Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC
typical), 6.9 A, 30 V.
- RDS(on) = 27 mW at VGS = 10 V.
- RDS(on) = 34 mW at VGS = 4.5 V.
- 100% RG (Gate Resistance) Tested.
- These Devices are Pb.
- Free and are RoHS Compliant
Specifications.
FDS6900AS-ONSemiconductor.pdf