Description
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar stripe,
DMOS technology.This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based o.
Features
- 13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A.
- Low Gate Charge (Typ. 43 nC).
- Low Crss (Typ. 20 pF).
- 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25.
