Description
This N
Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on
state resistance, and to provide superior switching performance and high avalanche energy strength.
Features
- 8 A 900 V, RDS(on) = 1.4 W (Max. ) @ VGS = 10 V, ID = 4 A.
- Low Gate Charge (Typ. 45 nC).
- Low Crss (Typ. 14 pF).
- 100% Avalanche Tested.
- This Device is Pb.
- Free Halide, Free and RoHS Compliant. DATA SHEET www. onsemi. com
GDS
TO.
- 220 CASE 221A
GDS
TO.
- 220 Fullpack, 3.
- Lead / TO.
- 220F.
- 3SG CASE 221AT
D
G
S.
