2SB1221 Datasheet - Panasonic Semiconductor

2SB1221 Silicon NPN Transistor

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (T.

2SB1221 Features

* 0.45

* 0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO

* 92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency C

2SB1221_PanasonicSemiconductor.pdf