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PDB4854S Dual N-Channel MOSFET

PDB4854S Description

Preliminary datasheet 40V Dual N-Channel MOSFETs PDB4854S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDB4854S Features

* 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDB4854S
Manufacturer
Potens semiconductor
File Size
551.96 KB
Datasheet
PDB4854S-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET Potens semiconductor
Potens semiconductor PDB4854S-like datasheet