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PDC0810V Dual N-Channel MOSFETs

PDC0810V Description

100V Dual N-Channel MOSFETs PDC0810V General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDC0810V Features

* 100V,7.8A, RDS(ON) =200mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDC0810V
Manufacturer
Potens semiconductor
File Size
638.13 KB
Datasheet
PDC0810V-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFETs

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Dual N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDC0810V-like datasheet