QPA3069 Datasheet - Qorvo

QPA3069 - 100W GaN Power Amplifier

2.7 * 3.5 GHz 100 W GaN Power Amplifier (10 Pcs.) 250 piece 7” reel Evaluation Board for QPA3069 Data Sheet Rev.

C, September 2019 1 of 19 www.qorvo.com ® Absolute Maximum Ratings Parameter Drain Voltage (VD) Value / Rang 40eV Gate Voltage Range (VG) *8 to +1 V Drain Curren

QPA3069 ® 2.7 3.5 GHz 100 W GaN Power Amplifier Product Overview Qorvo’s QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25).

Covering 2.7 3.5 GHz, the QPA3069 provides 50 dBm of saturated output power and 25 dB of large-signal gain while achieving 53% poweradded efficiency.

The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package.

It can support a variety of operating conditions to best

QPA3069 Features

* Frequency Range: 2.7

* 3.5 GHz

* PSAT (PIN=25 dBm): > 50 dBm

* PAE (PIN=25 dBm): > 53 %

* Power Gain (PIN=25 dBm): > 25 dB

* Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm

* Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across

QPA3069-Qorvo.pdf