TGF2023-2-20 - SiC HEMT

Qorvo

TGF2023-2-20 Datasheet Preview — Preview of TGF2023-2-20 PDF

Datasheet Details

Part number	TGF2023-2-20
Manufacturer	Qorvo
File Size	2.43 MB
Description	SiC HEMT
Datasheet	TGF2023-2-20-Qorvo.pdf

TGF2023-2-20 Product details

Description

100 Watt GaN HEMT 1 of 21 www.qorvo.com TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) Gate Voltage Range (VG) 100 V 7 to +2 V Drain Current (ID) Gate Current (IG) 20 A 20 to 56 mA Power Dissipation, CW (PD) See graph on pg.4. CW Input Power (PIN) Storage Temperature +43 dBm 65 to 150°C Exceeding any one or a combination of th

Features

advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency.

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Published: May 8, 2020 |