NP180N04TUG Datasheet - Renesas

N-CHANNEL POWER MOS FET

NP180N04TUG Features

* Super low on-state resistance RDS(on) = 1.2 mΩ TYP. / 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)

* High Current Rating ID(DC) = ±180 A (TO-263-7pin) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (

NP180N04TUG General Description

The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP180N04TUG-E1-AY Note NP180N04TUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel Note Pb-free (This product does not contain Pb in the e.

NP180N04TUG Datasheet (246.79 KB)