NP180N04TUJ Datasheet, Transistor, Renesas

✔ NP180N04TUJ Features

Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101

✔ NP180N04TUJ Application

Features
Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
Low Ciss: Ciss = 9500

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NP180N04TUJ

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📄 Datasheet

Description:

Mos field effect transistor. The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features * Low on-state re

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Renesas Electronics Corporation

MOSFET N-CH 40V 180A TO263-7

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NP180N04TUJ-E1-AY

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NP180N04TUJ MOS FIELD EFFECT TRANSISTOR Renesas