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NP180N04TUJ Datasheet - Renesas

MOS FIELD EFFECT TRANSISTOR

NP180N04TUJ Features

* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)

* Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP180N04TUJ -E1-AY ∗1 NP180N04TUJ -E2-AY ∗1 LEAD PLATING Pure S

NP180N04TUJ Datasheet (208.27 KB)

Preview of NP180N04TUJ PDF

Datasheet Details

Part number:

NP180N04TUJ

Manufacturer:

Renesas ↗

File Size:

208.27 KB

Description:

Mos field effect transistor.

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NP180N04TUJ MOS FIELD EFFECT TRANSISTOR Renesas

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