Part number:
NP180N04TUJ
Manufacturer:
File Size:
208.27 KB
Description:
Mos field effect transistor.
* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP180N04TUJ -E1-AY ∗1 NP180N04TUJ -E2-AY ∗1 LEAD PLATING Pure S
NP180N04TUJ Datasheet (208.27 KB)
NP180N04TUJ
208.27 KB
Mos field effect transistor.
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