RJH60F0DPQ-A0 Datasheet, Switching, Renesas

✔ RJH60F0DPQ-A0 Features

Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and

✔ RJH60F0DPQ-A0 Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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RJH60F0DPQ-A0

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📄 Datasheet

Description:

High speed power switching. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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IGBT TRENCH 600V 50A TO-247A

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RJH60F0DPQ-A0-T0

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RJH60F0DPQ-A0 High Speed Power Switching Renesas