Datasheet Details
Part number:
RJH60F5BDPQ-A0
Manufacturer:
File Size:
159.19 KB
Description:
IGBT
Features
* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =
RJH60F5BDPQ-A0, IGBT
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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Renesa
RJH60F5BDPQ-A0 Distributor
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