RJH60F3DPQ-A0 Datasheet, Switching, Renesas

RJH60F3DPQ-A0 Features

• Switching
• Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gat

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Part number:

RJH60F3DPQ-A0

Manufacturer:

Renesas ↗

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150.35kb

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📄 Datasheet

Description:

High speed power switching. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJH60F3DPQ-A0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJH60F3DPQ-A0

Renesas

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