Part number:
RJH60F3DPQ-A0
Manufacturer:
File Size:
150.35 KB
Description:
High speed power switching.
* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 2
RJH60F3DPQ-A0 Datasheet (150.35 KB)
RJH60F3DPQ-A0
150.35 KB
High speed power switching.
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